Simulation of organic light-emitting diodes

Christopher David James Blades; Alison B. Walker

doi:10.1117/12.348411

18 May 1999 Simulation of organic light-emitting diodes

Christopher David James Blades, Alison B. Walker

Proceedings Volume 3623, Organic Photonic Materials and Devices; (1999) https://doi.org/10.1117/12.348411
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We present a study of electrical transport in organic light emitting diodes using a 1D drift diffusion model. This model includes bipolar transport, charge injection and electron trapping on the same footing. As input we have mobilities, doping densities typical of organic semiconducting devices, and barrier heights taken from internal photoemission measurements. Charge density, trap filling, field, potential and recombination profiles in addition to current-voltage characteristics are provided by the mode. We have obtained result for two-layer organic devices, examining the influence of contacts and of traps on the current-voltage characteristic. The density of filled traps is determined by the position of the quasiFermi level with respect to the trap energy levels, and this changes with position and applied bias. The quasiFermi level profile is sensitive to both the type of contact and the doping density. Traps at a single energy level, and with exponential distributions with respect to discrete energy levels have been considered. We see an injection limited current at low biases and bulk limited transport at higher biases with a trap limited current contribution.

Citation Download Citation

Christopher David James Blades and Alison B. Walker "Simulation of organic light-emitting diodes", Proc. SPIE 3623, Organic Photonic Materials and Devices, (18 May 1999); https://doi.org/10.1117/12.348411

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