Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures

Bo Monemar; Peder Bergman; Galina R. Pozina; J. Dalfors; B. E. Sernelius; Per Olof Holtz; Hiroshi Amano; Isamu Akasaki

doi:10.1117/12.349292

24 May 1999 Carrier and exciton dynamics in In_0.15Ga_0.85 NGaN multiple quantum well structures

Bo Monemar, Peder Bergman, Galina R. Pozina, J. Dalfors, B. E. Sernelius, Per Olof Holtz, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 3624, Ultrafast Phenomena in Semiconductors III; (1999) https://doi.org/10.1117/12.349292
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We present a study of the radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well samples, where the conditions of growth of the InGaN quantum layers were varied in terms of growth temperature and donor doping. The photoluminescence peak position varies strongly (over a range as large as 0.3 eV) with excitation intensity, with donor doping as well as with delay time after pulsed excitation. The peak position is mainly determined by the Stark effect induced by the piezoelectric field. In addition potential fluctuations play an important role, and largely determine the width of the emission. These potential fluctuations may be as large as 0.2 eV in the present samples. Screening effects from donor electrons and excited electron-hole pairs are important, and account for a large part of the spectral shift with donor doping, with excitation intensity and with delay time after pulsed excitation (shifts up to 0.2 eV). We suggest a dominant role of 2D electron- and donor screening in this case, predicting that rather strong localization potentials of short range (of the order 100 angstroms) are present. The possibility that excitons as well as shallow donors are impact ionized by electrons in these rather strong lateral potential fluctuations present at this In composition is discussed in connection with the long decay times observed at all temperatures.

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Bo Monemar, Peder Bergman, Galina R. Pozina, J. Dalfors, B. E. Sernelius, Per Olof Holtz, Hiroshi Amano, and Isamu Akasaki "Carrier and exciton dynamics in In_0.15Ga_0.85 NGaN multiple quantum well structures", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); https://doi.org/10.1117/12.349292

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