Paper
24 May 1999 Ultrafast dynamics of confined and localized excitons in low-dimensional semiconductors
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Abstract
Coherent optical spectroscopy in the form of nonlinear transient four-wave mixing (TFWM) and linear resonant Rayleigh scattering (RRS) has been applied to investigate the exciton dynamics of low-dimensional semiconductor heterostructures. The dephasing times of excitons are determined from the decay of the spectrally resolved non- linear signal as a function of the delay between the incident pulses in a two-beam TFWM experiment, and from the real time analysis of single speckles in RRS experiments (pure dephasing). From the density- and temperature- dependence of the dephasing times the exciton-exciton and the exciton-phonon interactions are determined. The degree of coherence of the secondary emission is determined from the speckle analysis.
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Jorn M. Hvam, Wolfgang Langbein, and Paola Borri "Ultrafast dynamics of confined and localized excitons in low-dimensional semiconductors", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); https://doi.org/10.1117/12.349310
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KEYWORDS
Excitons

Scattering

Quantum wells

Gallium arsenide

Rayleigh scattering

Semiconductors

Picosecond phenomena

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