Paper
6 August 1999 Characterization of InGaN/AlGaN multiple-quantum-well laser diodes
Michael Kneissl, David P. Bour, Linda T. Romano, Daniel Hofstetter, Matt D. McCluskey, Clarence John Dunnrowicz, Mark Teepe, Rose M. Wood, Noble M. Johnson
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© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Kneissl, David P. Bour, Linda T. Romano, Daniel Hofstetter, Matt D. McCluskey, Clarence John Dunnrowicz, Mark Teepe, Rose M. Wood, and Noble M. Johnson "Characterization of InGaN/AlGaN multiple-quantum-well laser diodes", Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); https://doi.org/10.1117/12.356863
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KEYWORDS
Semiconductor lasers

Laser damage threshold

Quantum wells

Continuous wave operation

Mirrors

Indium gallium nitride

Metalorganic chemical vapor deposition

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