Recombination lifetimes in undoped and doped ZnCdSe laser structures

John F. Donegan; Christopher Jordan; G. Laird; S. Taniguchi; T. Hino; E. Kato; N. Noguchi; Akira Ishibashi

doi:10.1117/12.356902

6 August 1999 Recombination lifetimes in undoped and doped ZnCdSe laser structures

John F. Donegan, Christopher Jordan, G. Laird, S. Taniguchi, T. Hino, E. Kato, N. Noguchi, Akira Ishibashi

Proceedings Volume 3625, Physics and Simulation of Optoelectronic Devices VII; (1999) https://doi.org/10.1117/12.356902
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

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John F. Donegan, Christopher Jordan, G. Laird, S. Taniguchi, T. Hino, E. Kato, N. Noguchi, and Akira Ishibashi "Recombination lifetimes in undoped and doped ZnCdSe laser structures", Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); https://doi.org/10.1117/12.356902

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