Paper
29 April 1999 Analog modulation of 1.55-μm vertical-cavity lasers
Joachim Piprek, Koichi Takiguchi, Alexis Black, Patrick Abraham, Adrian Keating, Volkan Kaman, Sheng Z. Zhang, John Edward Bowers
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Abstract
We analyze the performance of InP/GaAs fused 1.55 micrometers vertical-cavity lasers (VCLs) under analog modulation. Our VCLs employ a strain-compensated InGaAsP/InP multi-quantum well (MQW) active region sandwiched between two AlGaAs/GaAs distributed Bragg reflectors. The first AlGaAs layer of the p-doped top mirror is laterally oxidized for optical and electrical confinement. These devices exhibit the lowest threshold current as well as the highest temperature of continuous-wave operation of any electrically pumped long- wavelength VCL. Two different device designs are investigated and compared. Reduction of the MQW barrier strain and enhancement of the optical index guiding by the oxide layer lead to an improvement of VCL performance. However, parasitic effects limit the modulation bandwidth. Higher order harmonic distortion is measured and simulated using a rate equation model. The model includes a non-linear gain function, gain compression, spontaneous emission and Auger recombination as well as carrier density dependent absorption in the quantum wells which reduces the differential gain. The good agreement between measurement and simulation indicates that electron-photon interaction within the quantum wells dominates the non-linear distortion. Multiple higher order response peaks are measured and reproduced by the model.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Piprek, Koichi Takiguchi, Alexis Black, Patrick Abraham, Adrian Keating, Volkan Kaman, Sheng Z. Zhang, and John Edward Bowers "Analog modulation of 1.55-μm vertical-cavity lasers", Proc. SPIE 3627, Vertical-Cavity Surface-Emitting Lasers III, (29 April 1999); https://doi.org/10.1117/12.347094
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Cited by 7 scholarly publications.
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KEYWORDS
Modulation

Quantum wells

Oxides

Distortion

Analog modulation

Absorption

Electrons

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