Ultrafast dynamic response of strain-compensated (GaIn)As/Ga(PAs) microcavity lasers

Christoph Ellmers; Simone Leu; Martin R. Hofmann; Denis Karaiskaj; Wolfgang W. Ruehle; Wolfgang Stolz

doi:10.1117/12.347088

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29 April 1999 Ultrafast dynamic response of strain-compensated (GaIn)As/Ga(PAs) microcavity lasers

Christoph Ellmers, Simone Leu, Martin R. Hofmann, Denis Karaiskaj, Wolfgang W. Ruehle, Wolfgang Stolz

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Proceedings Volume 3627, Vertical-Cavity Surface-Emitting Lasers III; (1999) https://doi.org/10.1117/12.347088
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Vertical-cavity surface-emitting lasers are optimized for fast intrinsic emission dynamics. The structure contains four times three quantum wells in a 2 (lambda) sin-type cavity. We have realized it using the strain-compensated (GaIn)As/Ga(PAs) material system with GaAs/AlAs Bragg mirrors. The laser emission after optical excitation with femtosecond pulses yields a pulse width of 3.2 ps and a peak delay of 4.8 ps to our knowledge the fastest values reported so far, at low temperatures. The design is successfully transferred to higher temperature operation. Picosecond dynamics is demonstrated also at room temperature with a pulse width of 13 ps and a peak delay of 9 ps. Laser operation over a broad temperature range from 140 K up to room temperature is achieved and also shows picosecond emission dynamics.

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Christoph Ellmers, Simone Leu, Martin R. Hofmann, Denis Karaiskaj, Wolfgang W. Ruehle, and Wolfgang Stolz "Ultrafast dynamic response of strain-compensated (GaIn)As/Ga(PAs) microcavity lasers", Proc. SPIE 3627, Vertical-Cavity Surface-Emitting Lasers III, (29 April 1999); https://doi.org/10.1117/12.347088

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