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29 April 1999 Ultrafast dynamic response of strain-compensated (GaIn)As/Ga(PAs) microcavity lasers
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Abstract
Vertical-cavity surface-emitting lasers are optimized for fast intrinsic emission dynamics. The structure contains four times three quantum wells in a 2 (lambda) sin-type cavity. We have realized it using the strain-compensated (GaIn)As/Ga(PAs) material system with GaAs/AlAs Bragg mirrors. The laser emission after optical excitation with femtosecond pulses yields a pulse width of 3.2 ps and a peak delay of 4.8 ps to our knowledge the fastest values reported so far, at low temperatures. The design is successfully transferred to higher temperature operation. Picosecond dynamics is demonstrated also at room temperature with a pulse width of 13 ps and a peak delay of 9 ps. Laser operation over a broad temperature range from 140 K up to room temperature is achieved and also shows picosecond emission dynamics.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christoph Ellmers, Simone Leu, Martin R. Hofmann, Denis Karaiskaj, Wolfgang W. Ruehle, and Wolfgang Stolz "Ultrafast dynamic response of strain-compensated (GaIn)As/Ga(PAs) microcavity lasers", Proc. SPIE 3627, Vertical-Cavity Surface-Emitting Lasers III, (29 April 1999); https://doi.org/10.1117/12.347088
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