High reliability in 0.8-um high-power InGaAsP/InGaP/AlGaAs laser diodes with a broad waveguide

Toshiro Hayakawa

doi:10.1117/12.344543

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1 April 1999 High reliability in 0.8-μm high-power InGaAsP/InGaP/AlGaAs laser diodes with a broad waveguide

Toshiro Hayakawa

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Proceedings Volume 3628, In-Plane Semiconductor Lasers III; (1999) https://doi.org/10.1117/12.344543
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Fifty-micrometer wide Al-free active region SCH-SQW lasers ((lambda) equals 808 nm, 32%/97% coated) grown by low-pressure MOVPE have shown stable operation at 700 mW and 50 degrees Celsius over 2000 hours without using a broad waveguide (d/(Gamma) equals 0.45 micrometer). We have made systematic study on the effects of the waveguide width Wg for 50- and 200-micrometer wide stripe lasers in the range of Wg equals 0.22-1.2 micrometer while the well width d is kept constant at 10 nm. The internal loss is reduced from 2 to less than 1.5 cm^-1 when Wg is increased from 0.22 to 1.2 micrometer. For 200-micrometer wide lasers, the slope efficiency monotonically increases with Wg for pulsed operation, and however, it is maximum at Wg equals 0.8 micrometer (d/(Gamma) equals 0.6 micrometer) for CW operation. When 200-micrometer wide devices (20%/97% coated) were operated at 2 W and 30 degrees Celsius, the median degradation rate showed a minimal value of 3 X 10^-6 h^-1 at Wg equals 0.8 micrometer, which is 7 times smaller than that at Wg equals 0.22 micrometer. The facet temperature measured by the modulation reflectance is also minimized at Wg equals 0.8 micrometer. For broad area lasers, thermal effects compete with the reduction of the optical confinement in the active quantum well, which determines the optimal Wg.

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Toshiro Hayakawa "High reliability in 0.8-μm high-power InGaAsP/InGaP/AlGaAs laser diodes with a broad waveguide", Proc. SPIE 3628, In-Plane Semiconductor Lasers III, (1 April 1999); https://doi.org/10.1117/12.344543

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