InGaAs versus HgCdTe for short-wavelength infrared applications

Antoni Rogalski; Robert Ciupa

doi:10.1117/12.344570

7 April 1999 InGaAs versus HgCdTe for short-wavelength infrared applications

Antoni Rogalski, Robert Ciupa

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344570
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

The carrier lifetimes in In_xGa_1-xAs (InGaAs) and Hg_1-xCd_xTe (HgCdTe) ternary alloys for radiative and Auger recombination are calculated for temperature 300 K in the short wavelength range 1.5 less than (lambda) less than 3.7 micrometer. Due to photon recycling, an order of magnitude enhancements in the radiative lifetimes over those obtained from the standard van Roosbroeck and Shockley expression, has been assumed. This theoretical prediction has been confirmed by good agreement with experimental data for n-type In_0.53Ga_0.47As. The possible Auger recombination mechanisms (CHCC, CHLH and CHSH processes) in direct-gap semiconductors are investigated. In both n-type ternary alloys, the carrier lifetimes are similar, and competition between radiative and CHCC processes take place. In p-type materials the carrier lifetime are also comparable, however the most effective channels of Auger mechanisms are: CHSH process in InGaAs, and CHLH process in HgCdTe. Next, the performance of heterostructure p-on-n photovoltaic devices are considered. Theoretically predicted R_oA values are compared with experimental data reported by other authors. In_0.53Ga_0.47As photodiodes have shown the device performance within a factor of 10 of theoretical limit. However, the performance of InGaAs photodiodes decreases rapidly at intermediate wavelengths due to mismatch-induced defects. HgCdTe photodiodes maintain high performance close to ultimate limit over a wider range of wavelengths. In this context technology of HgCdTe is considerably advanced since the same lattice parameter of this alloy over wide composition range.

Citation Download Citation

Antoni Rogalski and Robert Ciupa "InGaAs versus HgCdTe for short-wavelength infrared applications", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344570

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available