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The Metal-Semiconductor-Metal (MSM) photodetector has attracted a great deal of interest because of its potential for high speed operation and low fabrication cost. In this paper, the parameters affecting the capacitance, sensitivity and bandwidth of the interdigitated MSM photodiode are examined. Models are presented for the detector capacitance, gain and transmission line effects. The proposed circuit models have been verified by experimental results.
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Laurence W. Cahill, "Modeling of MSM photodetectors," Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344585