Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diode

Emmanuel Dupont; Hui C. Liu; Margaret Buchanan; Zbigniew R. Wasilewski; Daniel St-Germain; Paul C. Chevrette

doi:10.1117/12.344553

7 April 1999 Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diode

Emmanuel Dupont, Hui C. Liu, Margaret Buchanan, Zbigniew R. Wasilewski, Daniel St-Germain, Paul C. Chevrette

Author Affiliations +

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344553
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

This paper presents the recent developments of large area focal plane 'pseudo' arrays for infrared (IR) imaging. The devices (called QWIP-LED) are based on the epitaxial integration of an n-type mid-IR (8 - 10 micrometer in the present study) GaAs/AlGaAs quantum well detector with light emitting diode. The originality of this work is to use n-type quantum wells for large detection responsivity. From these structures, very large area (approximately equals cm²) mesas are processed with V-grooves to couple the mid-IR light with the QW intersubband transitions. The increase of spontaneous emission by the mid-infrared induced photocurrent is detected with a CCD camera in the reflection configuration. As demonstrated earlier on p-type QWIP structures the mid-IR image of a blackbody object is up-converted to a near-IR transformed image with very small distortion.

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Emmanuel Dupont, Hui C. Liu, Margaret Buchanan, Zbigniew R. Wasilewski, Daniel St-Germain, and Paul C. Chevrette "Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diode", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344553

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