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19 March 1999 Active Y-switch based on an asymmetrical BMFET device
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In this paper we propose an optoelectronic Y-switch based on a three terminal active device and on the mode-mixing principle. It consists of a 1400 micron long asymmetrical rib waveguide designed to sustain only the fundamental and the first propagating mode; along this waveguide the difference in effective indices between these modes cumulates to 2(pi) and the light emerges on the same side where it has been injected. In the ON state, the presence of an electron-hole plasma injected and spatially controlled with a Bipolar Mode Field Effect Transistor device (BMFET) forces the fundamental mode and the first propagating mode to be shifted by an additional -(pi) thus allowing the light to emerge from the other side of the waveguide. Numerical simulation of losses, cross-talk and switching speed are presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrea Irace, Giovanni Breglio, and Antonello Cutolo "Active Y-switch based on an asymmetrical BMFET device", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999);

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