Loss measurements for <beta>-SiC-on-insulator waveguides for high-speed silicon-based photonic devices

Adrian P. Vonsovici; Graham T. Reed; Alan G. R. Evans; Fereydoon Namavar

doi:10.1117/12.342797

19 March 1999 Loss measurements for β-SiC-on-insulator waveguides for high-speed silicon-based photonic devices

Adrian P. Vonsovici, Graham T. Reed, Alan G. R. Evans, Fereydoon Namavar

Proceedings Volume 3630, Silicon-based Optoelectronics; (1999) https://doi.org/10.1117/12.342797
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

In this work planar planar (beta) -SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO₂ layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 0.633, 1.3 and 1.55 micrometer in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.

Citation Download Citation

Adrian P. Vonsovici, Graham T. Reed, Alan G. R. Evans, and Fereydoon Namavar "Loss measurements for β-SiC-on-insulator waveguides for high-speed silicon-based photonic devices", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342797

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