Translator Disclaimer
Paper
19 March 1999 Loss measurements for β-SiC-on-insulator waveguides for high-speed silicon-based photonic devices
Author Affiliations +
Abstract
In this work planar planar (beta) -SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO2 layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 0.633, 1.3 and 1.55 micrometer in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adrian P. Vonsovici, Graham T. Reed, Alan G. R. Evans, and Fereydoon Namavar "Loss measurements for β-SiC-on-insulator waveguides for high-speed silicon-based photonic devices", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342797
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top