Monolithic SiGe/Si quantum well sensor circuit for the 8- to 12-um band

David J. Robbins; John L. Glasper; Carl J. Anthony; Michael J. Uren; Roger Timothy Carline; David C. Herbert; Weng Y. Leong

doi:10.1117/12.342779

19 March 1999 Monolithic SiGe/Si quantum well sensor circuit for the 8- to 12- μm band

David J. Robbins, John L. Glasper, Carl J. Anthony, Michael J. Uren, Roger Timothy Carline, David C. Herbert, Weng Y. Leong

Author Affiliations +

Proceedings Volume 3630, Silicon-based Optoelectronics; (1999) https://doi.org/10.1117/12.342779
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Long wavelength Si_0.8Ge_0.2/Si quantum well infrared photodetectors (QWIPs) grown by low pressure CVD have been fabricated both as discrete devices and integrated onto a CMOS readout circuit to produce a monolithic Si-based sensor circuit for detection of thermal radiation. The peak photoresponse of the detectors near 8 micrometer is dominated by transitions to unbound final states associated with the spin-orbit split-off valence band. These optical transitions are allowed by symmetry reduction in the quantum wells, which is also evident in the electrical properties. The electrical noise is nearly ideal for temperatures up to 70 K, with no excess low frequency flicker noise. The capture probability for photoexcited holes into the quantum wells is approximately 0.55 at low temperature. The external 500 K black body responsivities for both the discrete and the monolithically integrated QWIPs are approximately 1.8 mA W^-1 at 1 V bias, corresponding to a single pass of the radiation through the detectors. There is no degradation of either the CMOS transistors or the QWIPS caused by the integration process to create the monolithic sensor circuit.

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David J. Robbins, John L. Glasper, Carl J. Anthony, Michael J. Uren, Roger Timothy Carline, David C. Herbert, and Weng Y. Leong "Monolithic SiGe/Si quantum well sensor circuit for the 8- to 12- μm band", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342779

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