Translator Disclaimer
19 March 1999 Optical properties of Si-Ge-C nanostructures deposited by MBE
Author Affiliations +
Molecular beam epitaxy (MBE) has been used to deposit quantum structures in the material system Si-Ge-C in order to evaluate the possibilities for Si based opto-electronics. In particular the growth of Si/SiGeC quantum wells, the growth of quantum structures on pre-patterned Si substrate and the self- organized growth of Ge and C-induced Ge dots have been investigated. Studying the photoluminescence (PL) response of strained SiGeC quantum wells of various compositions and well widths by MBE the band discontinuities for compressively strained and lattice matched SiGeC/Si heterostructures have been determined. The data indicate a type I bandalignment in Si/SiGeC quantum well structures. By modifying the morphology, the chemistry or the strain of Si surfaces the formation of Ge quantum dots can be triggered. The growth of strained SiGe alloys on a small mesa leads to plastic relaxation of the strained film. The degree of relaxation depends on the thickness, the size, and the crystallographic orientation of the mesa. Phonon resolved PL spectra were obtained from the type II transition between the strained Si and the relaxed SiGe grown on small mesa structures. In addition, the self organized growth of Ge dots on bare and on C covered Si (100) surfaces has been studied. The deposition of 2 - 4 monolayers of Ge on these surfaces leads to the formation of small, irregularly shaped islands without facets. Intense photoluminescence is observed from samples containing multiple C-induced Ge island layers.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Detlev A. Gruetzmacher, Rainer Hartmann, Oliver Leifeld, Ulf Gennser, Christian David, Elizabeth Mueller, and Jan-Christoph Panitz "Optical properties of Si-Ge-C nanostructures deposited by MBE", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999);

Back to Top