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19 March 1999 Relaxed GeSi alloy grown on low-temperature buffers by MBE
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Abstract
We have developed a new MBE growth technique by using low- temperature-Si (LT-Si) or LT-GeSi buffer layers. Even if the Ge fraction up to 90%, the total thickness of fully relaxed GexSi1-x buffers can be reduced to 1.7 micrometer with dislocation density lower than 5 X 106 cm-2. The roughness is no more than 6 nm. According to the analysis of X-ray diffraction, the crystal quality of the top layer is very good, and the strain relaxation is quite inhomogeneous from the beginning of relaxation. By using high resolution cross section TEM, we observed that stacking faults are induced and form the misfit dislocations in the interface of GeSi/LT-Si. We propose that the formation of the stacking faults is due to the aggregation of the large amount of the vacant defects in the LT-Si layer.
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Chang-Si Peng, Qi Huang, Junming Zhou, Yi H. Zhang, C. H. Tung, T. T. Sheng, and Jian Wang "Relaxed GeSi alloy grown on low-temperature buffers by MBE", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342795
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