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30 April 1999 Characteristics of monolithically integrated InGaAs active pixel imager array
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Abstract
Switching and amplifying characteristics of a newly developed monolithic InGaAs active pixel imager array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion- mode junction field effect transistors for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near IR signa radiation. Adapting the existing 1.55 micrometers fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 X 1 test array will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness in preparation for the second phase demonstration of integrated, 2D monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Quiesup Kim, Thomas J. Cunningham, Bedabrata Pain, Michael J. Lange, and Gregory H. Olsen "Characteristics of monolithically integrated InGaAs active pixel imager array", Proc. SPIE 3631, Optoelectronic Integrated Circuits and Packaging III, (30 April 1999); https://doi.org/10.1117/12.348303
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