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30 April 1999 Simulation of integrated silicon-based Ge/Si quantum well and superlattice infrared photodetectors
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Abstract
We have performed quantum-mechanical analyses of strain- symmetrized Ge/Si QWIPs grown upon a realized buffer layer of Si0.4Ge0.6 on Si. The multi-quantum-well (MQW) QWIP has 50 angstrom-thick compressively strained p-doped Ge quantum wells and 200 angstrom-thick tensile-strained Si- rich SiGe barriers. This MQW allows shorter-wavelength IR sensing than prior-art unbuffered Si0.64Ge0.36/Si asymmetrically strained QWIPs because the valence band offsets are approximately 3x larger. We predict normal- incidence higher-temperature operation over the 1.7-to-3.8- micrometers wavelength band using the bound-to-bound and bound-to- continuum transitions HH1-SO1 and HH1-SO-C respectively. We expect that the p-i-p Ge/Si MQW pixels analyzed here can be fashioned into 2D imaging arrays, and that the arrays can be integrated monolithically with Si readout circuity. We also anticipate that multi-spectral IR imaging will be feasible by the technique of vertical epitaxial stacking of 'sub- QWIPs' within each pixel - where each sub-QWIP has a narrowband spectral response that differs from its neighbor's, and each sub-QWIP's electrical readout current is independent of its neighbor's.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Soref, Lionel R. Friedman, Michael J. Noble, Darlene Schwall, and L. R. Ram-Mohan "Simulation of integrated silicon-based Ge/Si quantum well and superlattice infrared photodetectors", Proc. SPIE 3631, Optoelectronic Integrated Circuits and Packaging III, (30 April 1999); https://doi.org/10.1117/12.348302
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