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28 May 1999 High-performance amorphous silicon image sensor for x-ray diagnostic medical imaging applications
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Following our previous report concerning the development of a 127 micrometer resolution, 7.4 million pixel, 30 X 40 cm2 active area, flat panel amorphous Silicon (a-Si) x-ray image sensor, this paper describes enhancements in image sensor performance in the areas of image lag, linearity, sensitivity, and electronic noise. New process improvements in fabricating a-Si thin film transistor (TFT)/photodiode arrays have reduced first-frame image lag to less than 2%, and uniformity in photoresponse to less than 5% over the entire 30 X 40 cm2 active area. Detailed analysis of image lag vs. time and x-ray dose will be discussed. An improved charge amplifier has been introduced to suppress image cross-talk artifacts caused by charge amplifier saturation, and system linearity has been optimized to eliminate banding effects among charge amplifiers. Preliminary sensitivity improvements through the deposition of CsI(Tl) directly on the arrays are reported, as well as overall imaging characteristics of this improved image sensor.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard L. Weisfield, Mark A. Hartney, Roger Schneider, Koorosh Aflatooni, and Rene Lujan "High-performance amorphous silicon image sensor for x-ray diagnostic medical imaging applications", Proc. SPIE 3659, Medical Imaging 1999: Physics of Medical Imaging, (28 May 1999);

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