Though most objections to the use of selenium are largely unfounded (lag and ghosting effects, low DQE), the high bias voltage associated with the thick layer of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications, may have some practical inconvenience. The purpose of this study was to evaluate the pertinence of a solution using a thin coplanar selenium layer, as a photosensitive converter requiring only a few tens of volts of bias, associated with a thick columnar coating of sodium doped cesium iodide scintillator. It will be shown that CsI(Na) can be evaporated with a very uniform needle-like morphology on amorphous selenium structures, the later showing no evidence of thermal recrystallization. Photoluminescence characterization of this scintillator material shows a light emission peak centered at 420 nm as expected, which matches the sensitivity spectrum of selenium. Preliminary sensitivity measurements give a signal in the range of 2000 pC/cm2/mR for 400 (mu) -CsI, with no reflector present. The thin selenium layers deposited display low dark currents of less than 130 pA/cm2 at an electric field of 10 volts per micron. Work in progress will be presented including the scintillator (x- ray absorption, sensitivity and emission), the thin selenium photosensor as well as the coupled structure characteristics.
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