Effects of mask roughness and condenser scattering in EUVL systems

Neil A. Beaudry; Tomas D. Milster

doi:10.1117/12.351140

25 June 1999 Effects of mask roughness and condenser scattering in EUVL systems

Neil A. Beaudry, Tomas D. Milster

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351140
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The wavefront reflected from extreme UV lithography mirror and mask surfaces can contain a non-negligible amount of phase variation due to roughness of the mirror surface and variations in multilayer thin-film coatings. We examine the characteristics of image and pattern formation as a function of phase variations originating at the mask surface and at condenser mirrors. A theoretical development and a Monte- Carlo simulation are used to show relationships between statistics of the phase variations and the mask pattern, coherence factor, and numerical aperture of the projection camera. Results indicate that it is possible to produce nearly 1 percent line-edge roughness in a photoresist pattern from moderate values of phase variations.

Citation Download Citation

Neil A. Beaudry and Tomas D. Milster "Effects of mask roughness and condenser scattering in EUVL systems", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351140

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