Mask topography simulation for EUV lithography

Ronald L. Gordon; Chris A. Mack

doi:10.1117/12.351100

25 June 1999 Mask topography simulation for EUV lithography

Ronald L. Gordon, Chris A. Mack

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351100
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

This paper introduces a methodology for rigorous computation of electric fields in the neighborhood of reflective masks employed in EUV lithography. Specifically, the media used in this application place stringent requirements on the spatial and temporal grids in order to achieve a stable and accurate Finite-Difference, Time-Domain calculation. An analytical expression for the electric field reflectivity off the multilayer is harnessed to define effective media that can decrease run times by as much as an order of magnitude. This framework is then used to analyze the effect of the absorber thickness on image linewidth and quality.

Citation Download Citation

Ronald L. Gordon and Chris A. Mack "Mask topography simulation for EUV lithography", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351100

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available