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25 June 1999 New silica glass for 157-nm lithography
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Abstract
Projection photolithography at 157 nm is now under research as a possible extension of current 248 nm and planned 193 nm technologies. However, the conventional silica glass used for 248 nm and 193 nm lithography cannot be applied for 157 nm lithography because of its low transmittance. In order to develop the modified silica glass for 157 nm lithography, the transmittance in the vacuum-UV region and the optical properties induced by vacuum-UV irradiation were investigated. The OH group and the ODC in the silica glass markedly affect the initial transmittance at 157 nm and the former also affects the resistance to vacuum -UV irradiation. The hydrogen bonded OH group was observed after vacuum-UV irradiation. From these results, the new silica glass 'AQF' for 157 nm lithography has been successfully developed with a high internal transmittance at 157 nm and a excellent resistance to F2 laser.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiaki Ikuta, Shinya Kikugawa, Akio Masui, Noriaki Shimodaira, Shuhei Yoshizawa, and Masahiro Hirano "New silica glass for 157-nm lithography", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351160
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