Proximity effects correction in real time

Piotr Jedrasik

doi:10.1117/12.351123

25 June 1999 Proximity effects correction in real time

Piotr Jedrasik

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351123
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

A method for the proximity effects correction in electron beam lithography for layouts with critical dimensions below 180 nm is proposed. A parallel processing system based on an artificial neural networks is suggested as a solution to the problem. The algorithm for the learning vector generation is based on a discrete iterative regularization. Several results of the correction process for different test layouts are presented. Error analysis of the error measure is presented. The difference between the target dose and the doses deposited in each exel after the correction process is smaller than 5 percent. As a hardware implementation of the real time proximity effects corrector the radial basis functions neural system is proposed. Simulations of the Gaussian synapse cell have been done. Results of our simulations assure that our neurocorrector can precompensate for one exel from the layout in less than 60 ns.

Citation Download Citation

Piotr Jedrasik "Proximity effects correction in real time", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351123

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