Effect of the control of global planarity of intermetal dielectric layers on the lithographic process window

Shani Keysar; Leah Markowitz; Corin Ben-Gigi; Rama Tweg; Ayelet Margalit-Ilovich; Avishai Kepten; Amir Wachs; Roey Shaviv

doi:10.1117/12.350815

14 June 1999 Effect of the control of global planarity of intermetal dielectric layers on the lithographic process window

Shani Keysar, Leah Markowitz, Corin Ben-Gigi, Rama Tweg, Ayelet Margalit-Ilovich, Avishai Kepten, Amir Wachs, Roey Shaviv

Author Affiliations +

Proceedings Volume 3677, Metrology, Inspection, and Process Control for Microlithography XIII; (1999) https://doi.org/10.1117/12.350815
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The sensitivity of lithographic process window to global planarity of the inter metal dielectric layers is established in this work. The inter metal dielectric layers, between the metal layers, were prepared by utilizing the H₂O₂/SiH₄ chemistry known as the 'Advanced Planarity Layer (APL)'. Four degrees of global planarity were tested within the APL process window, utilizing different H₂O₂ stabilization pressures. SEM cross sections were used to determine the degree of planarity in the CMOS product and at lithographic test structures. The lithographic process window and the effect of the stepper leveling system were defined for typical high and low topographies. The results how a strong link between the lithographic process window to degree of global planarity of the APL. Good global planarity enlarged depth of focus and energy latitude, allowing a wider lithographic process window. Also, in cases of improved APL planarity, the stepper leveling system had only a limited contribution to a lithographic process window. This control over the global planarity of the inter metal dielectric layers and the wide lithographic process window that results eliminate the need for CMP at 0.5 (mu) technology.

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Shani Keysar, Leah Markowitz, Corin Ben-Gigi, Rama Tweg, Ayelet Margalit-Ilovich, Avishai Kepten, Amir Wachs, and Roey Shaviv "Effect of the control of global planarity of intermetal dielectric layers on the lithographic process window", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350815

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