Pattern measurements of reticles with optical proximity correction assist features using the atomic force microscope

Kuo-Jen Chao; Robert J. Plano; Jeffrey R. Kingsley; J. Fung Chen; Roger F. Caldwell

doi:10.1117/12.350787

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14 June 1999 Pattern measurements of reticles with optical proximity correction assist features using the atomic force microscope

Kuo-Jen Chao, Robert J. Plano, Jeffrey R. Kingsley, J. Fung Chen, Roger F. Caldwell

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Proceedings Volume 3677, Metrology, Inspection, and Process Control for Microlithography XIII; (1999) https://doi.org/10.1117/12.350787
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

A 4X, 6 inch reticle with optical proximity correction assist feature intended for deep UV (DUV) exposure was investigated. A set of chrome lines with designed CD from 0.24 to 2.00 microns was profiled by AFM. The goal of this work is to present a method to ensure consistent measurement of chrome lines widths on the reticle. This is done by consistently measuring the line width at the half-height position on the line cross-section, i.e., full width at half maximum. Defining the boundaries of the line width at the half height locations of the edge steps. Using this method, the CD linearity is found to be within +/- 20 nm over a range of line width form 2.00 micrometers to 0.4 micrometers . Additionally, the CD uniformity is found to be worse when the widths of the lines are nominally less than 0.4 micrometers .

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Kuo-Jen Chao, Robert J. Plano, Jeffrey R. Kingsley, J. Fung Chen, and Roger F. Caldwell "Pattern measurements of reticles with optical proximity correction assist features using the atomic force microscope", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350787

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