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14 June 1999 Real-time methodologies for monitoring airborne molecular contamination in modern DUV photolithography facilities
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Abstract
In this paper, the authors discuss the critical airborne molecular contaminants found in DUV photolithography facilities. They present an overview of real-time monitoring methodologies that can detect and measure these contaminants at low concentrations, enabling users to anticipate and resolve AMC challenges before production problems can result. Citing actual examples of how real-time monitoring is being employe din production fabs, the authors examine single point investigate and multi-point process monitoring strategies, compare the different monitoring strategies, compare the different monitoring technologies now is use, and describe critical points to monitor in tracks, steppers, clean rooms, and air filtration systems. As a separate item, the authors describe an innovative, practical approach to quantifying resist environment sensitivity. It is anticipated this work will result in a standard methodology that can be used at individual process sites to determine the resist sensitivity to airborne molecular contamination under local operating conditions.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg P. Kishkovich, Devon A. Kinkead, John K. Higley, Robert Kirwin, and John Piatt "Real-time methodologies for monitoring airborne molecular contamination in modern DUV photolithography facilities", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350824
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