Wafer mapping for stepper effects characterization

Yuan Zhang; Ronald A. Carpio; Lucian Wagner; Peter V. Golubtsov

doi:10.1117/12.350812

14 June 1999 Wafer mapping for stepper effects characterization

Yuan Zhang, Ronald A. Carpio, Lucian Wagner, Peter V. Golubtsov

Proceedings Volume 3677, Metrology, Inspection, and Process Control for Microlithography XIII; (1999) https://doi.org/10.1117/12.350812
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

A simple technique is introduced to compare wafer flatness measured on a non-contact capacitative flatness gauge with flatness reported by a photolithography stepper. Because the capacitive gauge measures a wafer in a mechanically free state, the differences between the two types of wafer data maps represent the sets induced by the stepper. For wafers with large Total Thickness Variations (TTV), the effective stepper flatness comes close to the true metrology flatness. However, on ultra-flat wafers with very low TTVs, the stepper signature becomes more visible, which distorts the true flatness reading. Irregular wafer shape may also affect the flatness reading on the stepper due to imperfection of vacuum chucking.

Citation Download Citation

Yuan Zhang, Ronald A. Carpio, Lucian Wagner, and Peter V. Golubtsov "Wafer mapping for stepper effects characterization", Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); https://doi.org/10.1117/12.350812

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