Paper
11 June 1999 Approaches to etch-resistant 193-nm photoresists: performance and prospects
Robert D. Allen, Juliann Opitz, Hiroshi Ito, Thomas I. Wallow, Daniel V. Casmier, Richard A. Di Pietro, Phillip J. Brock, Gregory Breyta, Ratnam Sooriyakumaran, Carl E. Larson, Donald C. Hofer, Pushkara Rao Varanasi, Ann Marie Mewherter, Saikumar Jayaraman, Richard Vicari, Larry F. Rhodes, Shenliang Sun
Author Affiliations +
Abstract
We have investigated three substantially different routes to 193nm single layer resists. This paper will attempt to shed light on the strengths and weaknesses of each approach. Design principles, polymer synthesis and properties, and resist properties will be discussed for the three main branches of 193nm resists.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert D. Allen, Juliann Opitz, Hiroshi Ito, Thomas I. Wallow, Daniel V. Casmier, Richard A. Di Pietro, Phillip J. Brock, Gregory Breyta, Ratnam Sooriyakumaran, Carl E. Larson, Donald C. Hofer, Pushkara Rao Varanasi, Ann Marie Mewherter, Saikumar Jayaraman, Richard Vicari, Larry F. Rhodes, and Shenliang Sun "Approaches to etch-resistant 193-nm photoresists: performance and prospects", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350262
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Cited by 3 scholarly publications.
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KEYWORDS
Polymers

Polymerization

Etching

Absorbance

Resistance

Photoresist materials

Oxides

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