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11 June 1999 Benzyloxypropene-protected PHS resist system for e-beam applications
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E-beam lithography has recently emerged as a critical technology for the future semiconductor industry in the aspects of mask making, direct write and projection printing. Complexities in phase shifted and optical proximity corrected mask fabrications require high resolution, thermal bake insensitivity and RIE etch resistance. Direct write and projection also need high speed to address the throughput issue. These stringent requirements have rendered chemically amplified resists the strong candidates for the next generation E-beam lithography. Previously, we reported on a methoxypropene protected polyhydroxystyrene (PHS) system as a high performance chemically amplified E-beam resist. This system required weak aqueous base developer and was more sensitive to high temperature bake. The need for higher thermal stability to endure high temperature device fabrication process has prompted us to investigate other protecting groups. Benzyloxypropene protected PHS resist system was one of the earliest systems investigated. 100nm Cu lines fabricated with this resist formation through metallization, Damascence and lift off process have been demonstrated. In this paper, we will discuss the chemistry and properties of this resist system in conjunction with its E-beam lithography and metallization application.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wu-Song Huang, Ranee W. Kwong, Wayne M. Moreau, Mark Chace, Kim Y. Lee, C. K. Hu, David R. Medeiros, and Marie Angelopoulos "Benzyloxypropene-protected PHS resist system for e-beam applications", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999);

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