Chemical and processing aspects of thin imaging layers

Wendy F.J. Gehoel-van Ansem; Frank T.G.M. Linskens; Vinh Phuc Pham

doi:10.1117/12.350272

11 June 1999 Chemical and processing aspects of thin imaging layers

Wendy F.J. Gehoel-van Ansem, Frank T.G.M. Linskens, Vinh Phuc Pham

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350272
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

In this paper, commercially available DUV resist for 'thick' resist applications were used to study the chemical and processing aspects of thin imaging layers. Two types of resist were used: a high Rmin resist and a low Rmin resist, both from Shipley. Input parameters were process conditions such as soft bake, post-exposure bake and development time. Also the influence of the resist thickness was taken into account. Output parameters are contrast, profiles and process windows. The most important parameters for optimizing thin imaging layers are Rmin and the post- exposure bake.

Citation Download Citation

Wendy F.J. Gehoel-van Ansem, Frank T.G.M. Linskens, and Vinh Phuc Pham "Chemical and processing aspects of thin imaging layers", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350272

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