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11 June 1999 Chemical aspects of silicon-containing bilayer resists
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Abstract
We have prepare several novel silicon-containing polymers containing both low Ea and high Ea protecting groups, and we have evaluated these materials at both 193 nm. Low Ea acetal-containing polymers were prepared by reacting poly(4-vinylphenol) with novel silyl enol ethers. The ease of protecting group cleavage in these materials is manifested in the immediate formation of a strong latent image after exposure. High Ea polymers were prepared by introducing tertiary esters which contain the tris(trimethylsilyl)silyl group, and both methacrylate copolymers and norbornene-maleic anhydride copolymers containing this group have been synthesized. Both of these materials show good oxygen plasma etch resistance, with the latter demonstrating superior adhesion to poly(4- vinylphenol) planarizing layers. The tris(trimethylsilyl)silyl group imparts a high degree of hydrophobicity to coatings of many of these materials. Acid- catalyzed deprotection of these tertiary esters affords the corresponding carboxylic acids and 1-silyl-3-methylbutenes, and the liberation of these olefins is significantly faster than the loss of isobutylene from the tert-butyl analogs.
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Larry D. Boardman, Carl R. Kessel, and Steven J. Rhyner "Chemical aspects of silicon-containing bilayer resists", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350239
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