Paper
11 June 1999 Chemically amplified resists based on the norbornene copolymers with steroid derivatives
Jin-Baek Kim, Bum-Wook Lee, Jae-Sung Kang, Seong-Ju Kim, Joo Hyeon Park, Dong-Chul Seo, Ki-Ho Baik, Jae Chang Jung, Chi-Hyeong Roh
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Abstract
In order to develop a new series of chemically amplified photoresists for 193-nm lithography, norbornene substituted with a steroid derivative was copolymerized with maleic anhydride by free radical polymerization. The resulting polymers have excellent transmittance at 193 nm and possess good thermal stability up to 260 degrees C. The resist formulated with the polymers showed better dry-etching resistance than the conventional poly(hydroxystyrene) resist for Cl2/O2 plasma. With the standard developer, the resists from 0.15-0.20 micrometers patterns at doses of 5-18 mJ/cm2 using an ArF excimer laser stepper.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Baek Kim, Bum-Wook Lee, Jae-Sung Kang, Seong-Ju Kim, Joo Hyeon Park, Dong-Chul Seo, Ki-Ho Baik, Jae Chang Jung, and Chi-Hyeong Roh "Chemically amplified resists based on the norbornene copolymers with steroid derivatives", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350194
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Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Polymers

Resistance

Lithography

Excimer lasers

Photoresist materials

Plasma

Polymerization

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