Comparison of measured sidewall roughness for positive-tone chemically amplified resists exposed by x-ray lithography

Geoffrey W. Reynolds; James Welch Taylor

doi:10.1117/12.350240

11 June 1999 Comparison of measured sidewall roughness for positive-tone chemically amplified resists exposed by x-ray lithography

Geoffrey W. Reynolds, James Welch Taylor

Author Affiliations +

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350240
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

As critical dimensions for resist features shrink, resist roughness on the sidewall may contribute relatively more to the correspondingly smaller CD error budget. Thus, some photoresists may be more suitable than others for smaller dimensions. This paper compares and contrasts the sidewall roughness values measured by atomic force microscopy of two positive-tones, chemically amplified resists used in X-ray lithography.

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Geoffrey W. Reynolds and James Welch Taylor "Comparison of measured sidewall roughness for positive-tone chemically amplified resists exposed by x-ray lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350240

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