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11 June 1999 Improved resolution with advanced negative DUV photoresist with 0.26N capability
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Abstract
While positive photo resists make up the majority of the DUV market, negative resists have gained acceptance in IC manufacturing. Typically, negative photo resists can be used for a wide variety of feature types with minimal print bias including posts, lines/spaces and isolated lines. In some instances, negative resist are being investigated to print trenches and contact holes. Although negative resists are promising, there has been one issue. Dense line resolution has been limited by the onset of microbridging. Currently, minimum resolution for equal lines and spaces is about 200 nm with 0.26N developer, using conventional illumination. Recent developments in negative DUV resist technology have eliminated microbridging in 0.26N developer and has resulted in a significant increase in resolution. In addition to resolution and overall lithographic performance for sub 200 nm features, the PEB sensitivity, PED stability and other key resist performance capabilities will be demonstrated.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory P. Prokopowicz, Jacque H. Georger Jr., Eyad Ayyash, James W. Thackeray, William R. Brunsvold, Laura L. Kosbar, Ali Afzali-Kushaa, and Jeffrey D. Gelorme "Improved resolution with advanced negative DUV photoresist with 0.26N capability", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350181
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