11 June 1999Lithographic properties of novel acetal-derivatized hydroxy styrene polymers
Sanjay Malik, Andrew J. Blakeney, Lawrence Ferreira, Brian Maxwell, Allyn Whewell, Thomas R. Sarubbi, Murrae J. Bowden, Veerle Van Driessche, Toru Fujimori, Shiro Tan, Toshiaki Aoai, Kazuya Uenishi, Yasumasa Kawabe, Tadayoshi Kokubo
Sanjay Malik,1 Andrew J. Blakeney,1 Lawrence Ferreira,1 Brian Maxwell,1 Allyn Whewell,1 Thomas R. Sarubbi,1 Murrae J. Bowden,2 Veerle Van Driessche,3 Toru Fujimori,4 Shiro Tan,4 Toshiaki Aoai,4 Kazuya Uenishi,4 Yasumasa Kawabe,4 Tadayoshi Kokubo5
1Arch Chemicals, Inc. (United States) 2Arch Chemicals, N.V. (United States) 3Arch Chemicals, Inc. (Belgium) 4Fuji Photo Film Co., Ltd. (Japan) 5Fuji Film-Olin Co., Ltd. (Japan)
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Lithographic properties of a variety of acetal-derivatized styrene based polymers are reported. The structural modifications in the polymers involve varying the size of the pendent acetal moiety. the lithographic performances of the resists containing structurally modified acetals were found to be superior to the conventional acetals. In the cases where the acidolysis products of the modified acetals are non-volatile alcohols, the post-exposure volatilization, film shrinkage and plasma etch resistance were found to be significantly improved.
Sanjay Malik,Andrew J. Blakeney,Lawrence Ferreira,Brian Maxwell,Allyn Whewell,Thomas R. Sarubbi,Murrae J. Bowden,Veerle Van Driessche,Toru Fujimori,Shiro Tan,Toshiaki Aoai,Kazuya Uenishi,Yasumasa Kawabe, andTadayoshi Kokubo
"Lithographic properties of novel acetal-derivatized hydroxy styrene polymers", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350222
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Sanjay Malik, Andrew J. Blakeney, Lawrence Ferreira, Brian Maxwell, Allyn Whewell, Thomas R. Sarubbi, Murrae J. Bowden, Veerle Van Driessche, Toru Fujimori, Shiro Tan, Toshiaki Aoai, Kazuya Uenishi, Yasumasa Kawabe, Tadayoshi Kokubo, "Lithographic properties of novel acetal-derivatized hydroxy styrene polymers," Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350222