Molecular weight tailoring in methacrylate 193-nm photoresists

Thomas I. Wallow; Phillip J. Brock; Hoa D. Truong; Robert D. Allen; Juliann Opitz; Donald C. Hofer

doi:10.1117/12.350162

11 June 1999 Molecular weight tailoring in methacrylate 193-nm photoresists

Thomas I. Wallow, Phillip J. Brock, Hoa D. Truong, Robert D. Allen, Juliann Opitz, Donald C. Hofer

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350162
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Understanding and control of molecular weight-dependent properties of 193 nm photoresist polymers has received only limited attention to date. Many physical and thermal properties of polymers in general and novolak- and poly(hydroxystyrene)-based systems in particular are molecular weight dependent. Since these properties markedly influence photoresist behavior, a more detailed understanding of molecular weight effects in 193 nm polymers would be valuable. In this communication, we present a survey of some of the interplays between molecular weight, thermal properties, dissolution behavior, and lithographic performance of methacrylate-based 193 nm polymers. More specifically, this presentation comprises a discussion of discontinuities in thermal properties surrounding the polymer critical entanglement molecular weight in methacrylate 193 nm polymers including the IBM Version 2 and Version 3 platforms. T_g vs. molecular weight curves for both platforms are in good agreement with predictions of the Gibbs-DiMarzio model and reveal that M_crit is ca. 8,000 for these systems. Lithographic characterization at, below, and above this molecular weight reveals failure due to fraying and line collapse at low molecular weight, failure due to excessive bottom scumming at high molecular weight, and best performance at or near M_crit.

Citation Download Citation

Thomas I. Wallow, Phillip J. Brock, Hoa D. Truong, Robert D. Allen, Juliann Opitz, and Donald C. Hofer "Molecular weight tailoring in methacrylate 193-nm photoresists", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350162

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