Novel silicon-containing resists for EUV and 193-nm lithography

Carl R. Kessel; Larry D. Boardman; Steven J. Rhyner; Jonathan L. Cobb; Craig C. Henderson; Veena Rao; Uzodinma Okoroanyanwu

doi:10.1117/12.350204

11 June 1999 Novel silicon-containing resists for EUV and 193-nm lithography

Carl R. Kessel, Larry D. Boardman, Steven J. Rhyner, Jonathan L. Cobb, Craig C. Henderson, Veena Rao, Uzodinma Okoroanyanwu

Author Affiliations +

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350204
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Two families of polymers have been prepared and evaluated as silicon-containing bilayer resist candidates at both 193 nm and 13.4 nm (EUV). Both families of polymers are based on a tertiary ester protecting group in which the ester group contains a silicon cluster. The PRB family of polymers are random methacrylate copolymers and the PRC family are alternating maleic anhydride/norbornene polymers. The PRB family shows good resolution and sensitivity at both 193 nm and EUV, but suffers from adhesion failure between the imaging layer and the underlayer. The PRC polymers show good adhesion to underlayers and can print features at <EQ 0.12 micrometers at 193 nm and <EQ 0.10 micrometers at 13.4 nm.

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Carl R. Kessel, Larry D. Boardman, Steven J. Rhyner, Jonathan L. Cobb, Craig C. Henderson, Veena Rao, and Uzodinma Okoroanyanwu "Novel silicon-containing resists for EUV and 193-nm lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350204

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