Paper
11 June 1999 Optical lithography simulation and photoresist optimization for photomask fabrication
Author Affiliations +
Abstract
The demand for smaller and more uniform features on photomasks is rapidly increasing. The complexity of these patterns is also increasing with the need for optical proximity correction and phase shifting structures. These complex mask features demand unprecedented accuracy in pattern placement and dimensional control. We have conducted research designed to optimize the process for laser pattern generation by improving resolution and process latitude. Lithographic simulation was utilized for process optimization because of the very high cost of mask patterning and metrology experiments.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamen M. Rathsack, Cyrus Emil Tabery, Steven A. Scheer, Mike Pochkowski, Cecilia E. Philbin, Franklin D. Kalk, Clifford L. Henderson, Peter D. Buck, and C. Grant Willson "Optical lithography simulation and photoresist optimization for photomask fabrication", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350173
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photomasks

Refraction

Lithography

Picture Archiving and Communication System

Data modeling

Photoresist materials

Chromium

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