Organic antireflective coatings for 193-nm lithography

Peter Trefonas III; Robert F. Blacksmith; Charles R. Szmanda; Robert J. Kavanagh; Timothy G. Adams; Gary N. Taylor; Suzanne Coley; Gerd Pohlers

doi:10.1117/12.350257

11 June 1999 Organic antireflective coatings for 193-nm lithography

Peter Trefonas III, Robert F. Blacksmith, Charles R. Szmanda, Robert J. Kavanagh, Timothy G. Adams, Gary N. Taylor, Suzanne Coley, Gerd Pohlers

Author Affiliations +

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350257
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Organic anti-reflective coatings (ARCs) continue to play an important role in semiconductor manufacturing. These materials provide a convenient means of greatly reducing the resist photospeed swing and reflective notching. In this paper, we describe a novel class of ARC materials optimized for lithographic applications using 193 nm exposure tools. These ARCs are based upon polymers containing hydroxyl-alkyl methacrylate monomers for crosslinkable sites, styrene for a chromophore at 193 nm, and additional alkyl-methacrylate monomers as property modifiers. A glycouril crosslinker and a thermally-activated acidic catalyst provide a route to forming an impervious crosslinked film activate data high bake temperatures. ARC compositions can be adjusted to optimize the film's real and imaginary refractive indices. Selection of optimal target indices for 193 nm lithographic processing through simulations is described. Potential chromophores for 193 nm were explored using ZNDO modeling. We show how these theoretical studies were combined with material selection criteria to yield a versatile organic anti-reflectant film, Shipley 193 G0 ARC. Lithographic process data indicates the materials is capable of supporting high resolution patterning, with the line features displaying a sharp resist/ARC interface with low line edge roughness. The resist E_o swing is successfully reduced from 43 percent to 6 percent.

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Peter Trefonas III, Robert F. Blacksmith, Charles R. Szmanda, Robert J. Kavanagh, Timothy G. Adams, Gary N. Taylor, Suzanne Coley, and Gerd Pohlers "Organic antireflective coatings for 193-nm lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350257

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KEYWORDS

Reflectivity

Polymers

Chromophores

Antireflective coatings

Interfaces

Lithography

Absorption

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