Paper
11 June 1999 Second-generation 193-nm bilayer resist
Patrick Foster, Thomas Steinhaeusler, John J. Biafore, Gregory D. Spaziano, Sydney G. Slater, Andrew J. Blakeney
Author Affiliations +
Abstract
We have recently developed a bilayer resist system based on a methacrylic silicon-containing imageable layer and a UV curable copolymer undercoat which has exhibited 0.13 micrometers resolution for dense features and 0.12 micrometers resolution for isolated features after substrate etch. In this paper, we will discuss recent advancements in the design of the second generation bilayer resist. In particular, we will discuss the development of two new thermally curable undercoats for use in both 193 nm and 248 nm applications. The optical properties of these new materials have been optimized to reduce reflectivity at the desired wavelength.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Foster, Thomas Steinhaeusler, John J. Biafore, Gregory D. Spaziano, Sydney G. Slater, and Andrew J. Blakeney "Second-generation 193-nm bilayer resist", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350153
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Reflectivity

Ultraviolet radiation

Imaging systems

Image resolution

Optical properties

Photoresist processing

Etching

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