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26 July 1999 Challenge to 0.13-μm device patterning using KrF
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The extension of optical lithography to sub-0.18micrometers design rule using high NA KrF lithographic tool and resolution enhancement technique (RET) is strongly required because of the delayed ArF lithography technology. The theoretical limits, i.e., the diffraction limits of KrF lithography show that 0.1(Mu) m is in the unreachable region with current exposing tool of 0.6NA and even with high NA KrF scanners which will be available soon. Therefore 0.13micrometers device with 0.26micrometers pitch will be a real challenge to most lithographers. In this paper we discuss the status of 0.13micrometers device and show some of the critical device patterns exposed with several KrF scanners which are currently available. Many problems can easily be predicted and must be overcome. The challenge, however, seems to be surmountable in the near future.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Insung Kim, Junghyun Lee, DongHo Cha, Joonsoo Park, Hanku Cho, and Joo-Tae Moon "Challenge to 0.13-μm device patterning using KrF", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999);

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