Challenge to 0.13-um device patterning using KrF

Insung Kim; Junghyun Lee; DongHo Cha; Joonsoo Park; Hanku Cho; Joo-Tae Moon

doi:10.1117/12.354405

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26 July 1999 Challenge to 0.13-μm device patterning using KrF

Insung Kim, Junghyun Lee, DongHo Cha, Joonsoo Park, Hanku Cho, Joo-Tae Moon

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Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354405
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The extension of optical lithography to sub-0.18micrometers design rule using high NA KrF lithographic tool and resolution enhancement technique (RET) is strongly required because of the delayed ArF lithography technology. The theoretical limits, i.e., the diffraction limits of KrF lithography show that 0.1(Mu) m is in the unreachable region with current exposing tool of 0.6NA and even with high NA KrF scanners which will be available soon. Therefore 0.13micrometers device with 0.26micrometers pitch will be a real challenge to most lithographers. In this paper we discuss the status of 0.13micrometers device and show some of the critical device patterns exposed with several KrF scanners which are currently available. Many problems can easily be predicted and must be overcome. The challenge, however, seems to be surmountable in the near future.

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Insung Kim, Junghyun Lee, DongHo Cha, Joonsoo Park, Hanku Cho, and Joo-Tae Moon "Challenge to 0.13-μm device patterning using KrF", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354405

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