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26 July 1999 Challenge to sub-0.1-μm pattern fabrication using an alternating phase-shifting mask in ArF lithography
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We have developed ArF excimer laser lithography using an alternating phase-shifting mask (PSM) for sub-0.10 micrometers logic device fabrication. The requirement of phase accuracy is discussed on the 0.10micrometers isolated and dense line patterns. It is found that the phase accuracy of +/- 2 degrees is required in order to obtain the sufficient process margin and minimize the CD difference between the nonshifter portion and the shifter portion. The 0.07micrometers by optimizing the phase shift on the dual-trench type PSM. We have also confirmed the fabrication of the 0.05micrometers isolated and semi-dense line patterns. The 0.05micrometers line patterns could be attained with the sufficient processing margin, if the resist performance is further improved. Furthermore, we have investigated the effect of mask bias to the isolated line pattern. It has been demonstrated that the DOF is improved from 0.65(Mu) m to 0.8micrometers by adding the mask bias of 0.02micrometers to the 0.10micrometers isolated line pattern, because the mask bias makes the pivotal point controllable.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahiro Matsuo, Keisuke Nakazawa, and Tohru Ogawa "Challenge to sub-0.1-μm pattern fabrication using an alternating phase-shifting mask in ArF lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999);


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