Paper
26 July 1999 Feasibility studies of ArF lithography for sub-130-nm lithography
Seung-Hyuk Lee, Donggyu Yim, Young-Mog Ham, Ki-Ho Baik, Il-Hyun Choi
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Abstract
In this study, we evaluated the process margins of 193 nm lithography for sub-130 nm applications. We have investigated various cell structures and sizes for various illumination conditions such as the partial coherence factors, quadruple illuminations, and Optical Proximity Correction (OPC). We have also studied the Critical Dimension (CD) variation effects of topography with Bottom Anti-Reflective Coating (BARC) materials on various substrates such as silicon, nitride and aluminum. A 0.6 Numerical Aperture (NA) small field ArF stepper and a Hyundai-developed ArF single positive resist were used for this experiment. Internally-developed simulation program diffused aerial image model and Hyundai OPC simulation tool were also used to predict and effectively correct the optical proximity effect. The simulation result were compared with experimental results. Carefully optimizing the process conditions and optical settings, we obtained CD linearity of 190 nm, taking into account isolated-dense (ID) bias. With sub-130 nm VLSI cell pattern, we also verified the possibility of fabricating devices with sub-130 nm design rule by ArF lithography, with which we predicted some process issues such that ID bias of cell and peripheral patterns, CD bias of perpendicular axes in island patterns, contact hole patterns below 150 nm, pattern collapse, etc. Through this study, we verified that the 193 nm lithography could be applied for sub-130 nm technology.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seung-Hyuk Lee, Donggyu Yim, Young-Mog Ham, Ki-Ho Baik, and Il-Hyun Choi "Feasibility studies of ArF lithography for sub-130-nm lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354341
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KEYWORDS
Lithography

Critical dimension metrology

Reflectivity

Silicon

Optical proximity correction

Aluminum

Lithographic illumination

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