Optical proximity correction considering process latitude

Akio Misaka; Shinji Odanaka

doi:10.1117/12.354379

26 July 1999 Optical proximity correction considering process latitude

Akio Misaka, Shinji Odanaka

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354379
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

A two-step OPC approach, that consists of a cell level OPC and a chip level OPC, is proposed. The cell level OPC plays an important role on generating the layout design rules of gate patterns at the initial phase of technology development. The chip level OPC is dedicated to CD adjustment. The Cell level OPC includes the OPC patten generator and the verification part on the basis of a 3D aerial simulation. The effect of the OPC pattern is estimated, calculating the process windows. Cell layout patterns and OPC patterns are generated so as to maximize the process windows. The cell level OPC allows us to remove the error that breaks out in the cell size reduction process.

Citation Download Citation

Akio Misaka and Shinji Odanaka "Optical proximity correction considering process latitude", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354379

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