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26 July 1999 Practical methodology of optical proximity correction in subquarter-micron lithography
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Abstract
Optical proximity correction (OPC) is well known as a predominant method to overcome the proximity effect. However, it is not so simple to implement OPC in real process because of the difficulty in designing, manufacturing and inspecting the masks. Simple and practical methods of overcoming the optical proximity effects (OPE) in DRAM application are widely studied in this work. Simulation based layout optimization is effective for periodic cell patterns but establishment of some tolerable rules for circuit design needed for random periphery patterns. The characteristics of optical proximity effects are investigated in sub-quarter micron lithography as a function of various optical parameters such as numerical aperture, degree of partial coherence, and illumination type. It is also investigated the dependency of OPE on the resist kind, resist thickness, soft bake and post exposure bake temperatures as well as different substrates films.
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Chang-Moon Lim, Jae-Wook Seo, Chun-Soo Kang, Young-Soo Park, Jong-Tai Yoon, Chul-Seung Lee, Seung-Chan Moon, and Bong-Ho Kim "Practical methodology of optical proximity correction in subquarter-micron lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354381
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