Electrochemical etching of silicon in aqueous solutions

David Starosvetsky; Mark Kovler; Joseph Yahalom

doi:10.1117/12.341179

10 March 1999 Electrochemical etching of silicon in aqueous solutions

David Starosvetsky, Mark Kovler, Joseph Yahalom

Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341179
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France

Abstract

The increase in the etching rate of both n- and p-type silicon was obtained under cathodic biasing in alkaline solutions. In the case of n-silicon the acceleration of the etching rate in dark was found to be markedly enhanced by illumination. The high rate of etching of p-silicon at cathodically applied voltage was obtained only with illumination. When the process was carried out at potentials more negative than -10 V it provoked electropolishing of the etched surface. Shifting the potential in the cathodic direction increase the etch-rate and enhances the effect of polishing. The etch-rate increased by more than two orders of magnitude over the potential range from -10 to -50 V, and reached the values above 200 micron/hour.

Citation Download Citation

David Starosvetsky, Mark Kovler, and Joseph Yahalom "Electrochemical etching of silicon in aqueous solutions", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); https://doi.org/10.1117/12.341179

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