Optimum doses and mask thickness for synchrotron exposure of PMMA resists

Stewart K. Griffiths; Jill M. Hruby; Aili Ting

doi:10.1117/12.341239

10 March 1999 Optimum doses and mask thickness for synchrotron exposure of PMMA resists

Stewart K. Griffiths, Jill M. Hruby, Aili Ting

Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341239
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France

Abstract

Minimizing mask absorber thickness is an important practical concern in producing very small features by the LIGA process. To assist in this minimization, we have developed coupled numerical models describing both the exposure and subsequent development of a thick PMMA resist. The exposure model addresses multi-wavelength, 1D x-ray transmission through multiple beam filters, through the mask substrate and absorber, and the subsequent attenuation and photon absorption in the PMMA target. The development model describes 1D dissolution of a feature and its sidewalls, taking into account the variation in absorbed dose through the PMMA thickness. These exposure and development models are coupled in a single interactive code, permitting the automated adjustment of mask absorber thickness to yield a prescribed sidewall taper or dissolution distance.We have used this tool to compute the minimum required absorber thickness for exposures performed at the ALS, SSRL and NSLS synchrotron sources. Results are presented as a function of the absorbed dose for a range of the prescribed sidewall tolerance, feature size, PMMA thickness, mask substrate thickness and the development temperature.

Citation Download Citation

Stewart K. Griffiths, Jill M. Hruby, and Aili Ting "Optimum doses and mask thickness for synchrotron exposure of PMMA resists", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); https://doi.org/10.1117/12.341239

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