Effect of carrier low-field mobility model on low-temperature drain current-voltage simulation of CMOS devices

Wei-Lee Lu; Jenn-Gee Lo; Ting-Huan Chang

doi:10.1117/12.354548

26 July 1999 Effect of carrier low-field mobility model on low-temperature drain current-voltage simulation of CMOS devices

Wei-Lee Lu, Jenn-Gee Lo, Ting-Huan Chang

Author Affiliations +

Proceedings Volume 3698, Infrared Technology and Applications XXV; (1999) https://doi.org/10.1117/12.354548
Event: AeroSense '99, 1999, Orlando, FL, United States

Abstract

Temperature dependent low-field mobility models in the commercial device simulation program are studied to check their effects on the drain characteristics. The results show that low-field mobility has not effect on threshold voltage, subthreshold swing, and the saturation voltage, but it is very important in determining the drain saturation current, transconductance, and the channel conductance of the CMOS devices under low temperature operation. Better understanding of the carrier mobility and the usage of it in the simulation program can help us in designing high performance circuits and process development for the low temperature applications.

Citation Download Citation

Wei-Lee Lu, Jenn-Gee Lo, and Ting-Huan Chang "Effect of carrier low-field mobility model on low-temperature drain current-voltage simulation of CMOS devices", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); https://doi.org/10.1117/12.354548

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